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| MMBFJ270 P-CHANNEL SWITCH FEATURES * This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers * In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA * Case: SOT-23, Plastic * Terminals: Solderable per MIL-STD-750, Method 2026 * Approx. Weight: 0.008gram * Marking : 270 3 G D 1 S 2 ABSOLUTE MAXIMUM RATINGS TJ=25oC PARAMETER Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range SYMBOL VDG VGS I GF TJ,TSTG VALUE -30 30 50 -55 to +150 UNITS V V mA o C THERMAL CHARACTERISTICS PARAMETER Total Device Dissipaton Derate above 25oC Thermal Resistance, Junciton to Ambient (Note 1) Note 1 : Device mounted on FR-4 PCB, 70 x 60 x 1mm. SYMBOL PD RJA VALUE 225 1.8 556 UNITS mW mW/oC o C/W PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE REV.0.3-SEP.18.2009 PAGE . 1 MMBFJ270 ELECTRICAL CHARACTERISTICS TJ=25oC PARAMETER Off Characteristics Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage On Characteristics Zero-Gate Voltage Drain Current Forward Transferconductance I DSS gfs VDS= -15V,VGS=0 VGS=0V,VDS=15V,f=1.0kHz -2.0 6000 -15 15000 mA mhos V(BR)GSS I GSS VGS(OFF) I G=1.0A,VDS=0 VGS=20V,VDS=0 VDS= -15V,I D= -1.0nA 30 0.5 200 2.0 V pA V SYMBOL TEST CONDITION MIN. MAX. UNITS REV.0.3-SEP.18.2009 PAGE . 2 MMBFJ270 Common Drain-Source -10 I D -DRAI N CURR ENT (mA) Transfer Characteristics -32 Id- DRAIN CURRENT (mA) -8 -6 -4 -2 0 T A =25 C TYP V GS (off)=3V 0.25V V GS =0V 0.50V 0.75V 1V 1.25V 2V 3V o -24 V GS ( OFF )=-4.5V o -55 C o 25 C o 125 C V DS =-15V -16 V GS ( OFF )=-2.5V o -55 C o 25 C 125 oC -8 0 0 -1 -2 -3 -4 0 1 2 3 4 V DS -DRAIN-SOURCE VOLTAGE(V) V GS -GATE-SOURCE VOLTAGE (V) Power Derating - TRANSCONDUCTANCE (mmhos) 300 Parameter Interactions 100 50 r DS I DSS g fs r DS - DRAIN "ON" RESISTANCE () 1,000 500 250 PC[W], POWER DISSIPATION 200 150 10 5 I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ -100 mV, VGS = 0 V GS(off) @ V DS = - 15V, I D = - 1.0 A 100 50 100 50 fs 0 0 25 50 o g 75 100 125 150 175 1 Tc[ C], CASE TEMPERATURE 1 V GS (OFF) 10 2 5 10 - GATE CUTOFF VOLTAGE (V) - NORMALIZED RESISTANCE ( ) 100 50 20 10 5 2 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) 1 V GS(off) @ 5.0V, 10 A g os - OUTPUT CONDUCTANCE ( mhos) Normalized Drain Resistance vs Bias Voltage Output Conductance vs Drain Current f = 1.0 kHz -5.0V -5.0V 1000 r DS r DS = V GS 1 -________ V GS(off) 100 V GS(off) = - 4.5V -10V -20V -20V -10V 10 V GS(off) = - 2.5V DS _ 1 0.01 r _ _ 0.1 1 I D - DRAIN CURRENT (mA) _ 10 REV.0.3-SEP.18.2009 PAGE . 3 MMBFJ270 g fs - TRANSCONDUCTANCE (mmhos) Transconductance vs Drain Current C is (C rs ) - CAPACITANCE (pF) Capacitance vs Voltage 100 f = 0.1 - 1.0 MHz 10 5 V GS(off) = 2.5V 25C V GS(off) = 6.0V 1 0.5 V DG = -15V f = 1.0 kHz - 55C 25C 125C 10 5 C is (V DS = -15V) C rs (V DS = -15V) 0.1 _ 0.1 ID _ 1 10 - DRAIN CURRENT (mA) _ _ 100 1 0 4 8 12 16 V GS - GATE-SOURCE VOLTAGE (V) 20 Noise Voltage vs Frequency r DS - DRAIN "ON" RESISTANCE () e n - NOISE VOLTAGE (nV / Hz) 100 50 I D = - 0.2 mA Channel Resistance vs Temperature 1000 500 V GS(off) = 2.5V V GS(off) = 4.5V V GS(off) = 8.0V V DS = -100 mV V GS = 0 10 5 I D = 5.0 mA 100 50 V DG = - 15V BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.2f @ f 1.0 kHz 1 0.01 0.1 1 10 f - FREQUENCY (kHz) 100 10 -50 0 50 100 150 T A - AMBIENT TEMPERATURE ( o C) REV.0.3-SEP.18.2009 PAGE . 4 MMBFJ270 MOUNTING PAD LAYOUT ORDER INFORMATION * Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel LEGAL STATEMENT Copyright PanJit International, Inc 2009 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. REV.0.3-SEP.18.2009 PAGE . 5 |
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